FDD10AN06A0
Manufacturer:
On Semiconductor
Mfr.Part #:
FDD10AN06A0
Datasheet:
Description:
MOSFETs TO-252AA SMD/SMT N-Channel number of channels:1 135 W 60 V Continuous Drain Current (ID):50 A 37 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 60 V |
| Length | 6.73 mm |
| Width | 6.22 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 10.5 MΩ |
| Height | 2.39 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Voltage | 60 V |
| REACH SVHC | No SVHC |
| Weight | 4.535924 g |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current | 50 A |
| Current Rating | 50 A |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 135 W |
| Power Dissipation | 135 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 1.84 nF |
| Continuous Drain Current (ID) | 50 A |
| Rds On Max | 10.5 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| Turn-On Delay Time | 8 ns |
| Turn-Off Delay Time | 32 ns |
| Element Configuration | Single |
| Rise Time | 79 ns |
| Gate Charge | 37 nC |
| Drain to Source Resistance | 9.4 mΩ |
| Nominal Vgs | 4 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 2 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 4815
Distributors
pcbx
pcbxUnit Price$1.72045
Ext.Price$1.72045
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.72045 | $1.72045 |
| 10 | $1.11247 | $11.12470 |
| 25 | $0.98184 | $24.54600 |
| 50 | $0.86655 | $43.32750 |
| 100 | $0.76478 | $76.47800 |
| 300 | $0.69038 | $207.11400 |
| 500 | $0.62322 | $311.61000 |
| 1000 | $0.51677 | $516.77000 |